Комп’ютерне моделювання характеристик одноелектронних транзисторів
DOI:
https://doi.org/10.18372/1990-5548.51.11692Ключові слова:
одноелектронні транзистори, моделювання, вольт-амперні характеристикиАнотація
Розроблено методи моделювання електричних та температурних характеристик одноелектронного транзистора для інформаційного забезпечення системи автоматизованого схемотехнічного проектування Electronics Workbench. Проаналізовано залежність вольт-амперних характеристик наноприладу від впливу температури таробочого режимуПосилання
S. W. Hwang, KOSEC developed at Nanoelectronics Laboratory in Korea University. Seoul, Korea, 2008. 825 p.
Y. S. Yu, “Modeling of Single-Electron Transistors for Efficient Circuit and Design.” IEEE Trans. Electron. Devices. 1999, no. 7, pp. 1667–1682.
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