Computer simulation of characteristics single-electron transistors

Authors

  • O. S. Melnyk National Aviation University
  • Y. V. Poliakov National Aviation University
  • A. O. Kosov National Aviation University

DOI:

https://doi.org/10.18372/1990-5548.51.11692

Keywords:

Single-electron transistor, modeling, volt-ampere characteristics

Abstract

Proposed methods of modeling of electrical and temperature characteristics of single-electrontransistor for providing information to system of computer-aided design Electronics Workbench.Analyzed dependence in current-voltage characteristics of nano-device trough values of temperature andoperating mode

Author Biographies

O. S. Melnyk, National Aviation University

Candidate of Sciences (Engineering). Associate Professor.Electronics Department, Educational & Research Institute of Air Navigation

Y. V. Poliakov, National Aviation University

Student. Electronics Department, Educational & Research Institute of Air Navigation

A. O. Kosov, National Aviation University

Student. Electronics Department, Educational & Research Institute of Air Navigation

References

S. W. Hwang, KOSEC developed at Nanoelectronics Laboratory in Korea University. Seoul, Korea, 2008. 825 p.

Y. S. Yu, “Modeling of Single-Electron Transistors for Efficient Circuit and Design.” IEEE Trans. Electron. Devices. 1999, no. 7, pp. 1667–1682.

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Issue

Vol. 1 No. 51 (2017)

Section

COMPUTER-AIDED DESIGN SYSTEMS

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